Wolfspeed specifically designed its latest generation of SiC MOSFETs to be a better fit for both hard- and soft-switching ...

APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy savings in power supplies across a wide range of applications. Also included ...

Navitas Semiconductor, a developer of next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power ...

More efficient aerospace electronics made with third-generation semiconductor materials will be key to country’s lunar, deep ...

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The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

Mitsubishi Electric's European subsidiary Mitsubishi Electric R&D Centre Europe BV will begin developing a prototype to demonstrate a junction-temperature estimation technology for SiC power modules, ...

Despite the slowdown, AIXTRON remains positive and has net cash to invest in R&D to remain a technology leader. Explore more ...

Compared to traditional silicon-based semiconductors, GaN and SiC offer distinct advantages. "Whether it's power amplification, power electronics, or other applications, these discrete solutions ...