Despite the slowdown, AIXTRON remains positive and has net cash to invest in R&D to remain a technology leader. Explore more ...

“Compared to SiC MOSFETs with an SiO 2 insulator ... by loading an n-type free-standing GaN substrate from Mitsubishi Chemical Corporation into an MOCVD reactor and depositing a 12 µm-thick drift ...

Note that thanks to a breakdown field that’s greater than 16 MV cm-1 and a high electron mobility, AlN has a Baliga figure of merit more than 30 times that of GaN or SiC, enabling AlN ... density of ...

Researchers from Arizona State University are claiming to have fabricated the first AlN transistor that’s grown on a native ...

CHIPS and Science Act Proposed Direct Funding, Federal Investment Tax Credits and Direct State Funding Would Offset up to 50% of Costs This wafer fab capital investment plan supports MACOM’s ...

LOWELL, Mass.--(BUSINESS WIRE)--MACOM Technology Solutions Holdings, Inc. (“MACOM”) (Nasdaq: MTSI), is pleased to announce its long-term investment plan to modernize its Massachusetts and ...

Many of our academics speak to the media as experts in their field of research. If you are a journalist, please contact the University’s Media and PR Team: My main research interest is the application ...

With over twenty years of expertise in silicon carbide development, Infineon adopted a trench-based design to capitalize on the low RDS(on) characteristics of SiC MOSFETs, while ensuring safe oxide ...

Grundlagen von Energiematerialien, Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany ...