Electronic Design7d
SiC MOSFETs Tackle Tough Conditions in High-Power Electronics
Wolfspeed specifically designed its latest generation of SiC MOSFETs to be a better fit for both hard- and soft-switching ...
Compoundsemiconductor.net2d
SemiQ adds 1200V third gen SiC MOSFET
SemiQ Inc, a US SiC company, has announced the QSiC 1200V MOSFET, a third-generation device that shrinks die size while ...
Compoundsemiconductor.net3d
APC-E to introduce first SiC devices
APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy ...
New Electronics8d
Navitas’ GaN and SiC devices selected to power Dell’s AI Notebook family
Navitas Semiconductor, a developer of next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power ...
scmp.com10d
China’s power unit for future space missions gets top grades in orbital tests
The silicon carbide (SiC) power device designed by researchers at the Chinese ... Power semiconductor devices – or power ...
New Electronics1d
SemiQ 1200 V SiC MOSFETs deliver improved performance and reduce switching losses
SemiQ, a supplier of silicon carbide solutions for high performance applications, presents the new QSiC 1200V MOSFET.
Microwaves & RF1d
Differential Probe Supports Advanced Power Electronics Dev
Yokogawa's latest high-voltage, wide-bandwidth differential probe is equipped to handle next-generation power electronics for automobiles and other applications.
electronics360.globalspec8d
Vishay Intertechnology 650 V and 1,200 V SiC Schottky diodes in SOT-227 package increase efficiency in high frequency applications
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
RIR Power Electronics Ltd
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