Note that thanks to a breakdown field that’s greater than 16 MV cm-1 and a high electron mobility, AlN has a Baliga figure of merit more than 30 times that of GaN or SiC, enabling AlN ... density of ...

“Compared to SiC MOSFETs with an SiO 2 insulator ... by loading an n-type free-standing GaN substrate from Mitsubishi Chemical Corporation into an MOCVD reactor and depositing a 12 µm-thick drift ...

With over twenty years of expertise in silicon carbide development, Infineon adopted a trench-based design to capitalize on the low RDS(on) characteristics of SiC MOSFETs, while ensuring safe oxide ...

Several third-party foundry vendors are entering or expanding their efforts in the silicon carbide (SiC) business amid booming demand for the technology. However, making a significant dent in the ...